Journal of the Japan Institute of Metals and Materials
Online ISSN : 1880-6880
Print ISSN : 0021-4876
ISSN-L : 0021-4876
Measurement of Partial Pressure over CdSe and CdTe by an Optical Absorption Method
Kenzo IgakiMasayoshi Nakano
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1978 Volume 42 Issue 4 Pages 369-373

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Abstract

Partial pressures of the constituent elements over CdSe(s) and CdTe(s) have been measured by an optical absorption method. One set of measurements used optical cells consisted of an optical path chamber and a sample chamber. Dissociation constants were logKCdSe=logPCd2×PSe2(atm3)=−33416⁄T+20.43(707∼936°C) and logKCdTe=logPCd2×PTe2(atm3)=−29979⁄T+19.62(763∼908°C). Using another type of optical cell having also a reservoir chamber, control of partial pressure over the sample (CdSe(s) or CdTe(s)) was attempted by regulating saturated pressure of one of the constituent elements at the reservoir temperature, TR. When PiTR (i: Cd, Se2, Te2), the partial pressure at the reservoir, is larger than Pi*, the partial pressure corresponding to the total pressure minimum at a given temperature, partial pressure control is effective with such a reservoir. However, when PiTR is smaller than Pi*, partial pressure control by a reservoir is not effective, and the condition of the total pressure minimum dominates in the system.

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