Abstract
This paper describes how radiation noise of SiC-MOSFET and GaN-FET inverter differs from conventional IGBT and SJ-MOSFET inverter from benchmark test results using a 3.7 kW three-phase inverter circuit. Specifically, IGBT (2 types), SJMOSFET (2 types), SiC-MOSFET, GaN-FET (1 type each) are mounted on the DC 300 V input 20 A output three-phase inverter configured with TO-247. Only the gate drive circuit is designed as a power device recommended condition, and the other circuit configurations including the snubber circuit and the constants are unified. Next, observe the switching waveform with each inverter and measure the radiation noise when driving a 3.7 kW three-phase induction machine at a switching frequency of 10 kHz with a 10 m method based on CISPR at the EMC site. Finally, the difference of the radiation noise by the power device is verified from the viewpoint of "Modeling of EMI noise source "proposed by the author.
