Abstract
Device simulation is an important way to design new devices and predict their characteristics. Using the FEM, we analyzed switching characteristics of GTO. In this paper we simulate the carrier life-time control proposed recently to realize fast turn-off of GTO. The influences of intensity of irradiation and irradiated point for the local life-time control on switching characteristics were studied. The results show that the local life-time control has the possibility to reduce turn-off time of GTO keeping low on-state voltage.
