Abstract
Characteristics of power semiconductor devices such as Power MOSFETs, IGBTs and Thyristors at cryogenic temperature were examined by experiments and computer simulations using 2-Dimensional models. Power MOSFETs showed excellent characteristics at 80K. NPT (Non-Punch Through) IGBTs will show better characteristics than PT (Punch Through) IGBTs at cryogenic temperature. Thyristors can be operated, although on-voltage increases at cryogenic temperature.
