Abstract
Using an inverter is a highly effective method of achieving the low power consumption required to reduce the environmental impact of electronic devices. Toshiba has developed a high voltage dielectric isolation IC process that will become a key component of future inverters. The new process realizes 500V blocking with a construction that uses a silicon on insulator (SQI) wafer with 16um silicon layer and 4um buried oxide film. This was accomplished using Toshiba's original silicon wafer direct bonding technology and deep trench isolation technology. This process technology has been used to developed the TPD4005K high voltage pulse width modulation DC brush less motor driver.
