Abstract
Recent works on oxygen precipitation in Czochralski. silicon are summarized. These include studies on oxide precipitate growth, precipitate formation during cooling after crystal growth, and steady state as well as nonsteady state nucleation during annealing. It was found that the oxide precipitate growth is limited by the oxygen diffusion. We demonstrate that the homogeneous nucleation is the dominant process in the oxygen precipitation in carbonlean crystals. Time-lag in nucleation in high-low temperature two step annealing is briefly discussed On these bases, precise control of precipitate density and size is established. It is emphasized that the oxygen in silicon is the most interesting system in the nucleation research area.
