Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Characterization of Local Atomic Arrangement in Semiconductor mixed Crystal by X-ray Scattering
Jimpei HaradaYasuharu Kashihara
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1986 Volume 13 Issue 2-3 Pages 189-195

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Abstract
The observation of diffuse scattering due to short-range order ( SRO) between Al and Ga atoms in (Al_0.5 Ga_0.5)As which were grown by molecular beam epitaxy, has been made using both electron and X-ray diffraction methods. Only diffuse streaks along the <110> direction were detected, the origin of which must be low frequency transverse acoustic phonons. The absence of SRO diffuse scattering is considered as an evidence of random distribution of Al and Ga atoms in this substance, consistent with the thermodynamical calculation by Onabe ( K. Onabe: Jpn. J. Appl. Phys. 21 (1982) L323).
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© 1986 The Japanese Association for Crystal Growth
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