Abstract
Anti-phase disorder, which is well-known problem in the growth of polar GaAs on nonpolar substrate, is completely suppressed using slightly inclined (100) plane toward [011], in contrast to the case of exactly oriented (001) plane and inclined (100) plane toward [100]. It is also found that the [011] orientation of GaAs are always aligned to the inclined direction. Phase locking step model is proposed to understand the elimination of the anti-phase disorder, where the particular atoms with one dangling bond appear at the surface step and they preferentially bond with Ga atoms. Optical and electrical properties of GaAs/Ge layer without the anti-phase disorder are comparable to those of the homoepitaxial layer on GaAs.
