Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Direct Observation of Melt Convection of Silicon by X-ray Radiography
Koichi KakimotoMinoru EguchiHisao WatanabeTaketoshi Hibiya
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1988 Volume 15 Issue 2 Pages 217-223

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Abstract
Experimental and numerical approach to convection of molten silicon was surveyed. Natural and Forced convection of molten silicon during Czochralski single crystal growth was directly observed using X-ray radiography. Flow pattem of the melt was monitored using a solid tracer method. The tracer, whose density and wettability were adjusted to that of molten silicon, was newly developed. Observed flow of natural convection of molten silicon in a crucible was not only steady but also transient, and not axisymmetric. This asymmetry is attributed to asymmetric temperature distribution within the crucible. The flow velocity of molten silicon in a 75 mm-diameter crucible was 10 to 20 mm/sec. The experimental results were compared with previous numerical calculations.
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© 1988 The Japanese Association for Crystal Growth
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