Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Analysis of CZ Silicon Melt Flow : Experimental approach and theoretical approach(<Special Issue>)Bulk Crystal Growth(II))
Masahiro TanakaHisao EsakaYutaka Kishida
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1992 Volume 18 Issue 4 Pages 440-446

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Abstract
On CZ silicon crystal growth, melt flow affects formation of microdefects as well as formation of striations in the crystal. Furthermore, when large diameter crystal is produced, this plays a quite important role. There are many studies on CZ melt flow, however, mechanism of complex flow has not been clear. In order to clarify the mechanism for the origin of temperature fluctuation in the CZ silicon melt, temperature fluctuation in the melt has been mesured. Spectral analysis of these data showed that baroclinic waves exist in the melt. The results of numerical simulations also showed that baroclinic waves may be present in the melt. According to Fein's experiments and Eady's theory, present experimental condition is in the baroclinic wave region.
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© 1992 The Japanese Association for Crystal Growth
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