Global Heat Transfer Model for a Si CZ Growth Process(<Special Issue>)Bulk Crystal Growth(II))

Abstract

A mathematical model for Czochralski (CZ) crystal growth has been developed. The model is based on the assumptions of axial symmetry, diffuse-gray radiation, and conduction dominated heat transfer in the melt. The model (l) includes global radiative heat exchange, (2) is a transient model, (3) requires only physical properties and complete geometry, and (4) permits fast calculation of the view factors based on a novel computation method. Good agreement was obtained between the model and experimental results for the heater power of a 2" puller. Thermal histories of 2" and 6" crystals were calculated.