Abstract
Many varieties have been reported on methods of vapour growth for elemental semiconductors, III-V compounds, oxides and nitrides. Several of these methods are discussed in detail as representatives, which are as follows. 1) Hydrogen-reduction reaction of SiCl_4 in an open tube process: thermodynamics, experimental arrangements and their variations, effect of carrier gas flow rate and mechanism of the extaxial growth. 2) Pyrolysis of SiH_4, GeH_4 and other systems. 3) Disproportionate reaction of GaAs in a closed tube and an open tube processes: non-stoichiometry, impurity in a grown layer, and other reactive carrier gases. 4) Vapour growth of ternary compounds of GaAs_<1-x>P_x and In_<1-x>Ga_xP. 5) Vapour growth of SiO_2: pyrolysis of Si (OC_2H_5)_4, and growth from SiCl_1/CO_2, SiCl_4/NO, and SiCl_4 or SiH_4/O_2 or H_2O systems. 6) Vapour growth of nitrides: growth of SitN_4 by SiH_4/NH_3/H_2 and SiCl_4/NH_3/H_2 systems and of GaN by Ga/NH_3/HCl system.
