Abstract
Interstitial oxygen (Oi) striations in Czochralski grown silicon single crystals have been investigated by using a micro-Fourier transform infrared microscopy (micro-FTIR) mapping system. Oi striations are quantitatively measured, and Oi micro-distribution profiles exhibit irregularity. Their peak-to-valley vallues are reduced by decreasing the crucible rotation in a horizontal magnetic field of 0.3 T. Their periodic intervals are synchronized with the doped phosphorus concentration only when a magnetic field is applied and the seed rotation rate is set at less than 1 rpm. The origin of this periodic interval is discussed in terms of a microscopic segregation effect, whose coefficient for oxygen is proposed to be less than unity.
