Abstract
The existing models of atomic layer epitaxy of GaAs using trimethylgallium that explain the self-limiting nature of the epitaxy are critically reviewed. The kinetic parameters especially the methyl radical desorption constant play critical roles in the three models; the adsorbate inhibition, the site-selective decomposition, and the flux balance models. It is shown that no single model can fully explain the wide range of the experimentally observed kinetic parameters. The direction to the unified model is discussed. The role of surface reconstruction is also discussed.
