Abstract
Electric field effects at the interface influence the solute partitioning leading to an electric field-dependent equilibrium solute distribution cocfficient, k_<EO>. The causes of these electric fields, i.e., the thermoelectric power and the charge separation effects (crystallization EMF), are a function of growth velocity, V, temperature gradient, G_L, and solute boundary layer thickness, δ_c. Subsequently, the interface electric field becomes an extremely important variable for the crystallization process. Here, LiNbO_3 crystal growth from a stirred melt is discussed by considering the electric field-dependent solute partitioning for all of the seven intrinsic species. Additionally, the chemical conversion reactions in the melt are taken into account. The above considerations eventually lead us to discuss conditions for the dynamic congruent-state growth of LiNbO_3 from a finite amount of melt, 1-g via the Czochralski technique by finding an appropriate combination of δ_c(g), V(g) and G_L (g).
