Abstract
A PbSnTe single crystal was grown by traveling the molten zone at the speed of 2 mm/hr for 4 hours under microgravity in space. Sn composition in the crystal grown without thermal convection in the molten zone was almost constant in the growth length above 5 mm from the seed crystal. Carrier mobility at 77 K in the crystal grown in space was 3 times as large as that in the crystal grown under the same growth condition on the earth, indicating the high quality of the crystal grown under microgravity.
