Abstract
The effct of gravity on Vapor Phase Epitaxy of compound semiconductor was studied. The VPE growth experiments of InP in closed ampoules with halide transport agent were conducted on the ground and in a microgravity environment by German Spacelab mission D-2. It was fooud that epitaxial layer thickness distribution have various patterns and they are highly influenced by the gravity on the ground. However, the ones in a microgravity are almost flat and are mainly governed by diffusion processes.
