Abstract
High quaity ZnSe single crystals have been grown by a vapor phase transport method (modified Prior method), using a commercial grade high purity selenium and the zinc purified by vacuum distillation and overlap zone-melting. Photoluminescence and photoexcited cyclotron resonance studies confirm that the qualty of the grown crystals is very high. The donor concentration of the purest crystal is 4×10^<14>cm^<-3> and the cyclotron mobilities at 4.2K of electrons and heavy holes are 470,OOO and 21,000cm^2/V・s, respectively. A new emission related to twin boundaries is observed at 2.8002 eV, the intensity of which is proportional to the 1.2 power of the excitaion intensity.
