Abstract
The recent development of InP crystal growth technologies is reviewed. The improved liquid encapsulated Czochralski (LEC) methods based on thermal baffles are successfully applied to grow 50 mm diameter LEC InP with low dislocation densities. For growing InP crystals with the diameter larger than 75 mm for applications to electronic devices, the pressure controlled LEC methods were firstly developed and are now applied in production scale. The vertical gradient freezing (VGF) method which has the potentiality in growing lower dislocation density crystals had a difficulty in growing <100> single crystals because of twinning occurrence. This difficulty was however solved by the recent development in the VGF method. 100 mm diameter VGF <100> single crystals with the dislocation density level of 2000 cm^<-2> can be successfully grown.
