Abstract
In situ gravimetric monitoring of atomic layer epitaxy (ALE) of a cubic-GaN on GaAs (001) is investigated by a halogen transport system using GaCl and NH3 sources. The cubic-GaN growth of one monolayer / cycle is obtained at the temperature range from 350 to 400℃. The growth rate decreases with increasing temperature, and then the growth rate in one ALE cycle keeps a constant at about 0.45 from 410 to 450℃. Also, it is shown that a pure cubic-GaN can be grown by a halogen transport ALE.
