Abstract
Transport mechanism of oxygen in silicon melt under transverse magnetic fields was clarified using three-dimensional and time-dependent calculation. The calculation clarified the following results. 1) Oxygen in grown crystals is dissociated from side wall of a crucible. 2) Oxygen which was dissolved from side wall of a crucible is transferred parallel to magnetic fields. 3) Oxygen is incorporated from a region which settled parallel to magnetic fields to solid-liquid interface.
