Abstract
We have developed the growth technology of grown-in defects free CZ silicon single crystals "Pure Silicon" and have produced them at the mass-production level since December, 1998. Pure Silicon is able to be grown by controlling axial and radial v/G in crystals where v is pulling rate, and G is the temperature gradient at the solid/liquid interface. Pure Silicon can improve dramatically performances and yield of devices because of free of grown-in defects such as COP, void defects, and nuclei of OISF which cause degradation of GOI, junction leakage, and isolation leakage. Pure Silicon is one of the most possible candidates for the future advanced devices even in the production of 12 inch wafers.
