Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Growth of Langasite Single Crystal and Evaluation of Crystal Quality : Oxide(<Special Issue>Bulk Crystals for Human Activity in the New Millennium)
Satoshi UdaShou Qi WangOleg Buzanov
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2000 Volume 27 Issue 2 Pages 76-81

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Abstract
A Macro defect-free langasite (La_3Ga_5SiO_<14>) crystal 3" in diameter was grown along its Z-axis by the conventional Czochralski technique. The grown crystal represents clear faceting on (0001) and (011^^-0) faces, forming a basal Z plane and hexagonal columnar Y plane, respectively. Holding melt at the temperature close to the equilibrium melting temperature makes the supercooling degree appropriate for the development of the (0001) facet plane. A good balance between convection and surface stability of (0001) plane leads to the uniform interface during growth. The homogeneity in composition was investigated two-dimensionally by the X-ray Bond diffraction method. The congruent melt composition for langasite is also discussed relative to the stoichiometric composition.
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© 2000 The Japanese Association for Crystal Growth
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