Growth of Epitaxially Grown Bismuth Layer-structured Ferroelectric Thin Films and Their Characterization(<Special Issue>Synthesis of Functional Oxide Films through Chemical Method)

Abstract

SrBi_2Ta_O_9 (SBT) thin films were epitaxially grown on SrTiO_3 single crystals by metal organic chemical vapor deposition (MOCVD) . c-axis-oriented SBT film was deposited on (100) SrTiO_3 substrate above 620℃. On the other hand, (1 16)-oriented SBT film was grown on (110) SrTi03 substrate at 820℃. The remanent polarization and the coercive field of (116)-oriented SBT film were 11.4μC/cm^2 and 80 kV/cm, respectively. On the other hand, the (001) -oriented SBT film showed no ferroelectricity. These ferroelectric annisotropy of SBT agreed with the estimation from the crystal anysotropy of SBT.