Abstract
A 2-in single crystal of La_3Ga_5SiO_<14> (LGS) was successfully grown by the vertical Bridgman technique equipped with accelerated crucible rotation technique (ACRT). The selected growth axis was <101^^-1> which is an effective orientation for slicing commercial wafers. The furnace has three heatingzones where the temperature gradient was optimized for the growth. The secondary phase which is commonly observed along <101^^-0> was reduced by choosing the appropriate acceleration rate.
