Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Crystal growth of GaN/Si by MOCVD
Seikoh Yoshida, Jiang Li, Yoshiteru Itoh, Takahiro Wada, Hironari Takehara
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2002 Volume 29 Issue 2 Pages 34-

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Abstract
GaN was grown on the Si (111) substrate using MOCVD. The growth conditions of a buffer layer were investigated at 600-850℃. The optimum buffer layer condition was confirmed. As a result, a homogeneous GaN layer without cracking was obtained.
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© 2002 The Japanese Association for Crystal Growth
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