Relationship between Dislocation Density and Emission Efficiency in AlGaN-based Light Emitting Diodes(<Special Issue> Where are the Materials for Ultraviolet Devices and Where are These Going ?)

Abstract

AlGaN-based UV light emitting diode is fabricated and factors which limits performance of the UV LED is discussed. Microscopic cathodoluminescence suggests that dislocations act as the non-radiative recombination center. For the high-efficiency emission, it is necessary to reduce density of dislocations less than 2×10^7 cm^<-2>.