GaN Based Near-Ultraviolet Light-Emitting Devices(<Special Issue> Where are the Materials for Ultraviolet Devices and Where are These Going ?)

Abstract

In recent years, nitride materials which can emit red to ultraviolet light have attracted much attention from the viewpoint of wide-gap semiconductors. In this review article, we briefly present (a) low-dislocation density substrate, (b) hi-power 400 nm InGaN-LDs, (c) blue InGaN-LDs, (d) near-ultraviolet LDs, and then near-ultraviolet InGaN-LEDs.