Abstract
The angular dependences of lateral growth rate were determined as a function of growth temperature (Tg) in liquid phase epitaxy on InP (001), (111)A,B at Tg=330-490℃. From the observation of the deformation of artificially made tables after epitaxy, the anisotropic lateral growth rate was observed on (001), (111)B surfaces at low growth temperature. The kink-step structures were discussed to explain the obtained anisotropic lateral growth rate.
