Abstract
SOI (Si-on-insulator) substrate is one of the key materials to promote Si LSI performance in the "post-scaling era". Right after SOI devices were emerged in the market, many advanced SOI structures such as ultra-thin SOI, patterned-SOI, FinFET, and strained-SOI have been proposed. In this paper, we demonstrate our recent study on the evaluation of ultra-thin SOI and the formation of high-quality patterned-SOIs by Light Ion Implantation technique. We also describe recent progress in FioFET and strained-SOI, and discuss about the expectation for SOI substrates to realize them.
