Abstract
To grow InGaSb bulk crystals with uniform composition, the relationship between the composition and growth rate were measured. The samples was GaSb(seed)/InSb/GaSb(feed) sandwich structure and Te impurity was doped in the InSb. Thermal pulses were introduced during growth to form the Te striations. Experimental results indicated that lack of GaSb(feed) caused the decrease of growth rate and the increase of In composition. By adjusting the cooling rate, In_<0.03>Ga_<0.97>Sb homogeneous crystal were grown.
