Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
25aB08 Plasma MBE Growth of ZnO on GaAs Substrates(NCCG-34)
Akito Nishii, Kazuto Nishimura, Yoichi Nabetani, Takamasa Kato, Takashi Matsumoto
Author information
JOURNAL FREE ACCESS

2004 Volume 31 Issue 3 Pages 129-

Details
Download PDF (247K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Abstract
ZnO layers were grown on GaAs(111)B substrates by plasma assisted MBE. The c axis of ZnO was nearly perpendicular to (111) plane of GaAs, and the angle between the c axis and the [111] direction was determined by reciprocal lattice mapping. Effects of O/Zn beam flux ratio on the properties of grown layers were also studied.
Content from these authors
© 2004 The Japanese Association for Crystal Growth
Previous article Next article
Favorites & Alerts

Recently viewed articles
Share this page
feedback
 Top