Abstract
We report on the fabrication of periodic structures of InGaAs and InP on InP (111)A- or (111)B-oriented substrates by using selective-area (SA) MOVPE for the application of photonic crystals (PhCs). Array of hexagonal InGaAs and InP pillars are formed on masked substrates with circular mask openings at appropriate growth conditions. Air-hole arrays with InGaAs are also grown on substrates with periodic array of hexagonal masks.
