Abstract
Homogeneous growth apparatus for diamond single crystal which improved the uniformity of plasma was developed, and the chemical vapor deposition (CVD) technology of a large single crystal diamond was established. The design of the microwave plasma CVD apparatus which utilized electromagnetic-field analysis can generate uniform plasma now in the diameter range of more than 20mm. By using this CVD apparatus, 16-mm-square homoepitaxial growth was completed over the type Ib mosaic seed-crystal diamond. After 100h growth, the thickness of the epitaxial layer was over 1mm, and it had a jointed mosaic interface.
