Abstract
2D-axisymmetric global simulation was carried out to analyze temperature and velocity fields during silicon crystal growth. Configuration of heaters were changed to clarify the effects of the height and the position of the heaters on temperature distribution. We used a system with 3 heaters; heaterl and 2, heaterl and 3, heater2 and 3. Total heater power was distributed the heaters. Distribution of power in the heaters was modified to study how such distribution modifies the temperature distribution. We studied the effect of input heater power distribution and position of heaterl and 2 on the melt-solid interface shape, the thermal field and convection of melt in the crucible.
