Abstract
The seeded growth of GaN single crystals was performed at 1173K and a N_2 pressure of 0.8-5.0 MPa by the Na flux method using Na vapor. Transparent colorless crystals were grown on M-plane (10-10) of prismatic GaN seed crystals in a Na-Ga melt. The thickness of the crystals grown on the seeds by heating for 72 h was approximately 150μm in the directions perpendicular to the M plane, implying a growth rate of at least 1μm/h.
