Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
01aB01 Low and high bright discharge modes of a nitrogen radical source used for RF-MBE(NCCG-36)
K. Shimomura, K. Oride, N. Yamabe, K. Inui, Y. Takeda, K. Shibataki, O. Ariyada, M. Wada, T. Ohachi
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2006 Volume 33 Issue 4 Pages 197-

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Abstract
Low and high bright discharge modes of a nitrogen radical source were investigated for MEE (migration enhanced epitaxy) method of RF-MBE. The low bright (LB) mode and the high bright (HB) mode are the E mode discharge of capacitive coupling and the high- density H mode discharge of inductive coupling, respectively. The mode transition between LB and HB is applicable to MEE method of RF-MBE.
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© 2006 The Japanese Association for Crystal Growth
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