01aB03 Properties of h-GaN films grown on Si(111) substrates by MEE method using the mode transition of nitrogen discharge(NCCG-36)

Abstract

Hexagonal GaN(0001) films were grown on Si(111) by RF-MBE MEE method using the nitrogen mode change between high-bright discharge mode and low-bright one. It was found that inclusion of c-GaN into h-GaN controlled a time sequence by using PL and XRD.