Numerical Analysis of Impurity Transport in a Unidirectional Solidification Furnace for Multicrystalline Silicon(<Special Issue>Crystals Science and Technology of Solar Cells Materials -Concentrated on Crystal Growth-)

Abstract

For accurate prediction of carbon and oxygen impurities in multicrystalline silicon material for solar cells, global simulation of coupled oxygen and carbon transport in a unidirectional solidification furnace was implemented. Both the gas flow and silicon melt flow were considered. Five chemical reactions were included during the transportation of impurities. The simulation results show good agreement with experimental data.