Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Characterization of Polycrystalline Si by Photographic Surveying Using Electroluminescence(<Special Issue>Crystals Science and Technology of Solar Cells Materials -Concentrated on Crystal Growth-)
Takashi Fuyuki
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2010 Volume 36 Issue 4 Pages 305-307

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Abstract
Crystalline Si solar cells emit infrared light under the forward bias as so called "Electroluminescence". Photographic diagnosis technique has been developed to analyze not only the intrinsic defects (crystallographic defects, grain boundaries, etc.) but also the extrinsic deficiencies (substrate breakage and electrode snapping).
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© 2010 The Japanese Association for Crystal Growth
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