Abstract
Solution growth has a potential to achieve high quality bulk SiC growth. In this paper we review current advances in SiC solution growth specially focusing on the crystal quality. During the solution growth, threading dislocations tend to be converted to basal plane defects by the step-flow of macrosteps. This phenomenon implies that all dislocations can be excluded from the lateral face of the crystal in principle. Actually, high quality SiC crystal with very low threading dislocation density was obtained applying the dislocation conversion during the solution growth.
