Abstract
We demonstrate the high-speed growth of (2^^-01)-oriented β-Ga_2O_3by halide vapor phase epitaxy, and the orientation control of the β-Ga_2O_3 layers by using off-angled sapphire (0001) as the substrates.The β-Ga_2O_3 layers were grown using GaCl and O_2 as source gases. The growth rate monotonically increased with increasing the partial pressures of the source gases, reaching over 250 μm/h. X-ray pole figure measurement of a β-Ga_2O_3 layer grown on a sapphire (0001) substrate with no off angle indicated the presence of six inplane rotational domains, in accordance with the substrate symmetry, and some minor (310) domains. By using off-angled substrates and thick layer growth, one of the in-plane orientations was strongly favored and the incorporation of the (310) domainswas effectively suppressed. These results showthatthe HVPE technique is promising for the growth of β-Ga_2O_3 layers for the cost-effective production of β-Ga_2O_3 based devices.
