In-situ Low-energy Electron Microscopy Observations of Crystal Growth(<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques)

Abstract

Low-energy electron microscopy (LEEM) is a powerful tool for investigating surface dynamical processes such as crystal growth and phase transition. After reviewing the image formation principle of LEEM along with its distinctive characteristics, we present three examples of in-situ LEEM observations of crystal growth; growth of C_<60> monolayers on Si(111), growth of twinned epitaxial Si layers on Si(111), and growth of graphene on metals by carbon segregation.