Single Crystal Growth and Electrical Properties of β-Ga₂O₃ by Edge-defined Film-fed Growth Process

Abstract

  This article describes the edge-defined film-fed growth (EFG) process of β-Ga₂O₃ bulk crystals. We first describe the conditions of the bulk crystal's growth and the fabrication process of the wafers. Then, we discuss the efforts to control electrical properties, and give some experimental results of residual impurity measurement, intentional doping using Si and Sn for n-type doping and Fe for insulating doping, and the effects of annealing on donor concentration. We also discuss recent findings on β-Ga₂O₃ bulk crystals' main crystal defects.