CVD Growth Mechanism of hBN-Graphene Heterostructure

Abstract

  We introduce studies on the origin of different formation of hexagonal boron nitride (hBN)-graphene heterostructures by Chemical Vapor Deposition (CVD) growth, focusing on our theoretical investigation based on the first-principles calculations. We found that the presence or absence of H termination changed the shape of the edges of hBN islands and graphene islands. In addition, we have found the possibility of in-plane growth and layered growth of the heterostructure.