Polychromatic InGaN LEDs based on tailored three-dimensional structures

Abstract

  Arbitrary visible spectra synthesis and switching are important for a variety of fields, including advanced lighting, high-performance displays, visible light communications, and chemical and biological analyses. However, conventional light-emitting diodes (LEDs) with planar structures emit light at a particular wavelength determined by the semiconductor material’s bandgap. This limitation restricts the spectral designability of InGaN-based LEDs. As a result, the assembly of multiple LEDs with different colors becomes a complex and time-consuming process, posing a challenge for the development of full-color micro-LED displays, which are a key device for the aforementioned applications. To overcome this issue, we have proposed InGaN quantum wells on novel three-dimensional (3D) structures with polychromatic emission properties. In this report, we present the current status and future prospects of polychromatic InGaN LEDs using tailored 3D structures for micro-LED displays.