Journal of the Japanese Association for Crystal Growth
Online ISSN : 2187-8366
Print ISSN : 0385-6275
ISSN-L : 0385-6275
Experimental and Theoretical Studies on LPE Morphology of Semiconductors(<Special Issue>Morphology of Crystals)
Tatau NishinagaKangsa Pak
Author information
JOURNAL FREE ACCESS

1979 Volume 6 Issue 3-4 Pages 189-201

Details
Abstract
Two typical LPE morphologies have been theoretically and experimentally studied. The one is called wave or terrace which appears on the substrate with a small misorientation from (111) or (100) low index singular plane. The other has a spike shape and is found on the edge of the substrate. Both morphologies are studied by solving 2-dimensional diffusion equation. The former is explained by morphological stability theory in which solid-liquid interface shape has been connected with the 2-dimensional diffusion field. The theory predicts the functional dependency of the wavelength on supersaturation as well as roughly its absolute value. The latter morphology which has been called edge growth is explained to be formed by the diffusion of the solute from the outside of the solution on the nongrowth region adjacent to the growth edge. Several methods to minimize the edge growth have been proposed.
Content from these authors
© 1979 The Japanese Association for Crystal Growth
Previous article Next article
feedback
Top