Electric properties of carbon-doped n-type β-FeSi2/p-type Si heterojunction diodes

Motoki Takahara; Tarek M. Mostafa; Ryuji Baba; Suguru Funasaki; Mahmoud Shaban; Nathaporn Promros; Tsuyoshi Yoshitake

doi:10.56646/jjapcp.3.0_011101

International Conference and Summer School on Advanced Silicide Technology 2014

Session ID : 011101

DOI https://doi.org/10.56646/jjapcp.3.0_011101

Conference information

Host: The Japan Society of Applied Physics

Name : International Conference and Summer School on Advanced Silicide Technology 2014

Location : Tokyo, Japan

Date : July 19, 2014 - July 21, 2014

Light emission and detection materials

Electric properties of carbon-doped n-type β-FeSi₂/p-type Si heterojunction diodes

Motoki Takahara, Tarek M. Mostafa, Ryuji Baba, Suguru Funasaki, Mahmoud Shaban, Nathaporn Promros, Tsuyoshi Yoshitake

Author information

Motoki Takahara
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Tarek M. Mostafa
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Ryuji Baba
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Suguru Funasaki
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Mahmoud Shaban
Department of Electrical Engineering, Aswan Faculty of Engineering, Aswan University, Aswan 81542, Egypt
Nathaporn Promros
Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Chalongkrung Road, Bangkok 10520, Thailand
Tsuyoshi Yoshitake
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

CONFERENCE PROCEEDINGS OPEN ACCESS

Details

Abstract

Undoped and C-doped n-type β-FeSi₂ thin films were epitaxially grown on p-type Si substrates by sputtering and their heterojunction diode performances were experimentally studied. The near-infrared photodetection, at a wavelength of 1.3 µm, in these heterojunction diodes was clearly improved as compared to the heterojunctions comprising undoped-β-FeSi₂. From X-ray diffraction and Raman spectroscopic measurements, there were no evident structural differences between the undoped and C-doped films. C-doping hardly affects the crystallization and epitaxial growth of β-FeSi₂. The enhancement in the diode performance by C-doping might be owing to C atoms terminating dangling bonds and compensating defects in β-FeSi₂ crystals.

Corresponding author

Register with J-STAGE for free!