The laser ablation as a perspective technique for the deposition of metal-silicide nanoparticles in situ embedded in PECVD of Si:H thin films

Abstract

In this paper we introduce amorphous hydrogenated silicon thin films (a-Si:H) deposited by PECVD with embedded magnesium silicide (Mg₂Si) nanoparticles (NPs) which are created by reactive laser ablation (RLA) of Mg target in low pressure of silane (SiH₄). Both techniques are periodically changed in short intervals–each of the monolayers of Mg₂Si NPs is covered by thin a-Si:H film. The physical characteristics of those films are studied not only on high quality optical substrates but in diode structures too. As a final result we introduce the voltage dependence of the electroluminescence of deposited diodes.