Host: The Japan Society of Applied Physics
Name : Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)
Location : Fukuoka, Japan
Date : July 16, 2016 - July 18, 2016
We fabricated Mg2Si pn-juncion photodiodes with a shallow mesa structure and a ring electrode using a conventional photolithography process and investigated their electrical and optical character. Dark current densities of about 0.18 and 9 × 10−4 A/cm2 were obtained at room temperature and 100 K under the reverse bias at −3 V. Photoresponse below about 2.1 µm was observed in the shallow mesa-type PDs at room temperature operation. The photosensitivity at 1.31 µm was determined about 22 and 42 mA/W for the bias voltage at 0 and −0.1 V, respectively.